In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization
Stress changes in GeTe thin films on silicon have been studied in situ as a function of temperature by optical curvature measurements. Crystallization of the initially amorphous layers is evidenced by a steep tensile stress buildup. The crystallization temperature is shown to be thickness-dependent...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2018-11-01
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| Series: | Micro and Nano Engineering |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007218300030 |
| _version_ | 1811197124181753856 |
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| author | B. Ben Yahia M.S. Amara M. Gallard N. Burle S. Escoubas C. Guichet M. Putero C. Mocuta M.-I. Richard R. Chahine C. Sabbione M. Bernard L. Fellouh P. Noé O. Thomas |
| author_facet | B. Ben Yahia M.S. Amara M. Gallard N. Burle S. Escoubas C. Guichet M. Putero C. Mocuta M.-I. Richard R. Chahine C. Sabbione M. Bernard L. Fellouh P. Noé O. Thomas |
| author_sort | B. Ben Yahia |
| collection | DOAJ |
| description | Stress changes in GeTe thin films on silicon have been studied in situ as a function of temperature by optical curvature measurements. Crystallization of the initially amorphous layers is evidenced by a steep tensile stress buildup. The crystallization temperature is shown to be thickness-dependent for the thinner films. Various annealing conditions, such as cooling/re-heating steps and isothermal stages, allow exploring the thermo-mechanical behavior of the films. A non-thermoelastic temperature-dependent behavior is observed in the amorphous phase before crystallization. Keywords: Phase-change materials, GeTe, Thin films, Stress measurements, Thermomechanical behaviour |
| first_indexed | 2024-04-12T01:10:31Z |
| format | Article |
| id | doaj.art-efe0ec581a7e4923851363076d921cfa |
| institution | Directory Open Access Journal |
| issn | 2590-0072 |
| language | English |
| last_indexed | 2024-04-12T01:10:31Z |
| publishDate | 2018-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Micro and Nano Engineering |
| spelling | doaj.art-efe0ec581a7e4923851363076d921cfa2022-12-22T03:54:08ZengElsevierMicro and Nano Engineering2590-00722018-11-0116367In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallizationB. Ben Yahia0M.S. Amara1M. Gallard2N. Burle3S. Escoubas4C. Guichet5M. Putero6C. Mocuta7M.-I. Richard8R. Chahine9C. Sabbione10M. Bernard11L. Fellouh12P. Noé13O. Thomas14Aix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334, Campus de St-Jérôme, 13397 Marseille Cedex 20, FranceAix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334, Campus de St-Jérôme, 13397 Marseille Cedex 20, FranceAix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334, Campus de St-Jérôme, 13397 Marseille Cedex 20, France; Synchrotron SOLEIL, l'Orme des Merisiers, Saint-Aubin–BP 48, 91192 Gif-sur-Yvette, FranceAix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334, Campus de St-Jérôme, 13397 Marseille Cedex 20, France; Corresponding author.Aix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334, Campus de St-Jérôme, 13397 Marseille Cedex 20, FranceAix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334, Campus de St-Jérôme, 13397 Marseille Cedex 20, FranceAix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334, Campus de St-Jérôme, 13397 Marseille Cedex 20, FranceSynchrotron SOLEIL, l'Orme des Merisiers, Saint-Aubin–BP 48, 91192 Gif-sur-Yvette, FranceAix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334, Campus de St-Jérôme, 13397 Marseille Cedex 20, France; ID01/ESRF, The European Synchrotron, 71 rue des Martyrs, 38043 Grenoble, France.Université Grenoble Alpes, CEA-LETI, MINATEC campus, 17 rue des Martyrs, 38054 Grenoble, FranceUniversité Grenoble Alpes, CEA-LETI, MINATEC campus, 17 rue des Martyrs, 38054 Grenoble, FranceUniversité Grenoble Alpes, CEA-LETI, MINATEC campus, 17 rue des Martyrs, 38054 Grenoble, FranceUniversité Grenoble Alpes, CEA-LETI, MINATEC campus, 17 rue des Martyrs, 38054 Grenoble, FranceUniversité Grenoble Alpes, CEA-LETI, MINATEC campus, 17 rue des Martyrs, 38054 Grenoble, FranceAix Marseille Univ, Univ Toulon, CNRS, IM2NP UMR 7334, Campus de St-Jérôme, 13397 Marseille Cedex 20, FranceStress changes in GeTe thin films on silicon have been studied in situ as a function of temperature by optical curvature measurements. Crystallization of the initially amorphous layers is evidenced by a steep tensile stress buildup. The crystallization temperature is shown to be thickness-dependent for the thinner films. Various annealing conditions, such as cooling/re-heating steps and isothermal stages, allow exploring the thermo-mechanical behavior of the films. A non-thermoelastic temperature-dependent behavior is observed in the amorphous phase before crystallization. Keywords: Phase-change materials, GeTe, Thin films, Stress measurements, Thermomechanical behaviourhttp://www.sciencedirect.com/science/article/pii/S2590007218300030 |
| spellingShingle | B. Ben Yahia M.S. Amara M. Gallard N. Burle S. Escoubas C. Guichet M. Putero C. Mocuta M.-I. Richard R. Chahine C. Sabbione M. Bernard L. Fellouh P. Noé O. Thomas In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization Micro and Nano Engineering |
| title | In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization |
| title_full | In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization |
| title_fullStr | In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization |
| title_full_unstemmed | In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization |
| title_short | In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization |
| title_sort | in situ monitoring of stress change in gete thin films during thermal annealing and crystallization |
| url | http://www.sciencedirect.com/science/article/pii/S2590007218300030 |
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