Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process

Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process

This article reports an improvement in the low-frequency noise characteristics in hafnium oxide-based (HfO2) field-effect transistors by different precursor materials at ALD process. The Hafniumoxide on the devices were fabricated once with organic precursor materials and once with chloridic precurs...

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Bibliographic Details
Main Authors: Daniel Hessler, Ricardo Olivo, Tim Baldauf, Konrad Seidel, Raik Hoffmann, Chaiwon Woo, Maximilian Lederer, Yannick Raffel
Format: Article
Language:English
Published: Elsevier 2024-04-01
Series:Memories - Materials, Devices, Circuits and Systems
Subjects:
Flicker noise
Hafnium oxide
ALD process
Scattering factor
Main noise source
Online Access:http://www.sciencedirect.com/science/article/pii/S2773064623000725

Internet

http://www.sciencedirect.com/science/article/pii/S2773064623000725

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