Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process
This article reports an improvement in the low-frequency noise characteristics in hafnium oxide-based (HfO2) field-effect transistors by different precursor materials at ALD process. The Hafniumoxide on the devices were fabricated once with organic precursor materials and once with chloridic precurs...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-04-01
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| Series: | Memories - Materials, Devices, Circuits and Systems |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2773064623000725 |
| _version_ | 1797256311681843200 |
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| author | Daniel Hessler Ricardo Olivo Tim Baldauf Konrad Seidel Raik Hoffmann Chaiwon Woo Maximilian Lederer Yannick Raffel |
| author_facet | Daniel Hessler Ricardo Olivo Tim Baldauf Konrad Seidel Raik Hoffmann Chaiwon Woo Maximilian Lederer Yannick Raffel |
| author_sort | Daniel Hessler |
| collection | DOAJ |
| description | This article reports an improvement in the low-frequency noise characteristics in hafnium oxide-based (HfO2) field-effect transistors by different precursor materials at ALD process. The Hafniumoxide on the devices were fabricated once with organic precursor materials and once with chloridic precursor materials. The investigation shows an improvement in the noise behavior when using chloridic precursor materials. Regarding the main noise source, which are divided into fluctuation of the number of carriers (ΔN) and fluctuation of the effective transistor mobility (Δμ), the results show that the devices fabricated with organic precursor materials show typical behavior of ΔN noise, where the devices fabricated with chloridic precursor materials show typical behavior of Δμ noise. |
| first_indexed | 2024-03-08T16:32:47Z |
| format | Article |
| id | doaj.art-f020b3fa7bcf48608bfe1a3e39669a37 |
| institution | Directory Open Access Journal |
| issn | 2773-0646 |
| language | English |
| last_indexed | 2024-04-24T22:19:44Z |
| publishDate | 2024-04-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Memories - Materials, Devices, Circuits and Systems |
| spelling | doaj.art-f020b3fa7bcf48608bfe1a3e39669a372024-03-20T06:12:10ZengElsevierMemories - Materials, Devices, Circuits and Systems2773-06462024-04-017100095Improvement of low-frequency noise behavior with chloridic precursor materials at ALD processDaniel Hessler0Ricardo Olivo1Tim Baldauf2Konrad Seidel3Raik Hoffmann4Chaiwon Woo5Maximilian Lederer6Yannick Raffel7Fraunhofer IPMS, CNT, Dresden 01109, Germany; Corresponding author.Fraunhofer IPMS, CNT, Dresden 01109, GermanyHTW Dresden, Dresden 01069, GermanyFraunhofer IPMS, CNT, Dresden 01109, GermanyFraunhofer IPMS, CNT, Dresden 01109, GermanyFraunhofer IPMS, CNT, Dresden 01109, GermanyFraunhofer IPMS, CNT, Dresden 01109, GermanyFraunhofer IPMS, CNT, Dresden 01109, GermanyThis article reports an improvement in the low-frequency noise characteristics in hafnium oxide-based (HfO2) field-effect transistors by different precursor materials at ALD process. The Hafniumoxide on the devices were fabricated once with organic precursor materials and once with chloridic precursor materials. The investigation shows an improvement in the noise behavior when using chloridic precursor materials. Regarding the main noise source, which are divided into fluctuation of the number of carriers (ΔN) and fluctuation of the effective transistor mobility (Δμ), the results show that the devices fabricated with organic precursor materials show typical behavior of ΔN noise, where the devices fabricated with chloridic precursor materials show typical behavior of Δμ noise.http://www.sciencedirect.com/science/article/pii/S2773064623000725Flicker noiseHafnium oxideALD processScattering factorMain noise source |
| spellingShingle | Daniel Hessler Ricardo Olivo Tim Baldauf Konrad Seidel Raik Hoffmann Chaiwon Woo Maximilian Lederer Yannick Raffel Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process Memories - Materials, Devices, Circuits and Systems Flicker noise Hafnium oxide ALD process Scattering factor Main noise source |
| title | Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process |
| title_full | Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process |
| title_fullStr | Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process |
| title_full_unstemmed | Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process |
| title_short | Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process |
| title_sort | improvement of low frequency noise behavior with chloridic precursor materials at ald process |
| topic | Flicker noise Hafnium oxide ALD process Scattering factor Main noise source |
| url | http://www.sciencedirect.com/science/article/pii/S2773064623000725 |
| work_keys_str_mv | AT danielhessler improvementoflowfrequencynoisebehaviorwithchloridicprecursormaterialsataldprocess AT ricardoolivo improvementoflowfrequencynoisebehaviorwithchloridicprecursormaterialsataldprocess AT timbaldauf improvementoflowfrequencynoisebehaviorwithchloridicprecursormaterialsataldprocess AT konradseidel improvementoflowfrequencynoisebehaviorwithchloridicprecursormaterialsataldprocess AT raikhoffmann improvementoflowfrequencynoisebehaviorwithchloridicprecursormaterialsataldprocess AT chaiwonwoo improvementoflowfrequencynoisebehaviorwithchloridicprecursormaterialsataldprocess AT maximilianlederer improvementoflowfrequencynoisebehaviorwithchloridicprecursormaterialsataldprocess AT yannickraffel improvementoflowfrequencynoisebehaviorwithchloridicprecursormaterialsataldprocess |