Formation of SiC by Vacuum Carbidization on Porous Silicon
Planar-view TEM investigation revealed the formation of cubic silicon carbide layers on porous silicon by vacuum carbidization. The formation of cubic silicon layers in the form of a two-phase system was found. At the same time, the formed SiC layers on the mesoporous buffer layer are predominantly...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2022-10-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/3438 |