Formation of SiC by Vacuum Carbidization on Porous Silicon
Planar-view TEM investigation revealed the formation of cubic silicon carbide layers on porous silicon by vacuum carbidization. The formation of cubic silicon layers in the form of a two-phase system was found. At the same time, the formed SiC layers on the mesoporous buffer layer are predominantly...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2022-10-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/3438 |
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| author | M. V. Labanok S. L. Prakopyeu S. A. Zavatski V. P. Bondarenko P. I. Gaiduk |
| author_facet | M. V. Labanok S. L. Prakopyeu S. A. Zavatski V. P. Bondarenko P. I. Gaiduk |
| author_sort | M. V. Labanok |
| collection | DOAJ |
| description | Planar-view TEM investigation revealed the formation of cubic silicon carbide layers on porous silicon by vacuum carbidization. The formation of cubic silicon layers in the form of a two-phase system was found. At the same time, the formed SiC layers on the mesoporous buffer layer are predominantly polycrystalline. Using the Rutherford backscattering method, it was found that the use of buffer layers of porous silicon makes it possible to obtain SiC layers of greater thickness than on a pure silicon substrate under similar conditions of vacuum carbidization. It is shown that an increase in the pore size in porous silicon layers leads to an increase in the thickness of the formed SiC layers. It has been shown by scanning electron microscopy that vacuum carbideization of porous silicon leads to formation of SiC grains in pores, partial overgrowth and sintering of pores. The dependence of the SiC grain size on the pore size was established. |
| first_indexed | 2024-04-10T03:11:46Z |
| format | Article |
| id | doaj.art-f0247491450c4da88be010a9900a4a1c |
| institution | Directory Open Access Journal |
| issn | 1729-7648 |
| language | Russian |
| last_indexed | 2025-03-14T05:47:51Z |
| publishDate | 2022-10-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj.art-f0247491450c4da88be010a9900a4a1c2025-03-05T12:43:12ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482022-10-01206142110.35596/1729-7648-2022-20-6-14-221832Formation of SiC by Vacuum Carbidization on Porous SiliconM. V. Labanok0S. L. Prakopyeu1S. A. Zavatski2V. P. Bondarenko3P. I. Gaiduk4Belarusian State UniversityBelarusian State UniversityBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State UniversityPlanar-view TEM investigation revealed the formation of cubic silicon carbide layers on porous silicon by vacuum carbidization. The formation of cubic silicon layers in the form of a two-phase system was found. At the same time, the formed SiC layers on the mesoporous buffer layer are predominantly polycrystalline. Using the Rutherford backscattering method, it was found that the use of buffer layers of porous silicon makes it possible to obtain SiC layers of greater thickness than on a pure silicon substrate under similar conditions of vacuum carbidization. It is shown that an increase in the pore size in porous silicon layers leads to an increase in the thickness of the formed SiC layers. It has been shown by scanning electron microscopy that vacuum carbideization of porous silicon leads to formation of SiC grains in pores, partial overgrowth and sintering of pores. The dependence of the SiC grain size on the pore size was established.https://doklady.bsuir.by/jour/article/view/3438silicon carbide, porous silicon, vacuum carbidization, thin films |
| spellingShingle | M. V. Labanok S. L. Prakopyeu S. A. Zavatski V. P. Bondarenko P. I. Gaiduk Formation of SiC by Vacuum Carbidization on Porous Silicon Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki silicon carbide, porous silicon, vacuum carbidization, thin films |
| title | Formation of SiC by Vacuum Carbidization on Porous Silicon |
| title_full | Formation of SiC by Vacuum Carbidization on Porous Silicon |
| title_fullStr | Formation of SiC by Vacuum Carbidization on Porous Silicon |
| title_full_unstemmed | Formation of SiC by Vacuum Carbidization on Porous Silicon |
| title_short | Formation of SiC by Vacuum Carbidization on Porous Silicon |
| title_sort | formation of sic by vacuum carbidization on porous silicon |
| topic | silicon carbide, porous silicon, vacuum carbidization, thin films |
| url | https://doklady.bsuir.by/jour/article/view/3438 |
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