Investigation of gate leakage current in TFET: A semi-numerical approach
Tunneling FET (TFET) has been demonstrated as a favorable candidate to replace conventional MOSFETs in low-power applications. However, there are many challenges that should be overcome to efficiently operate the TFET. One of the most limiting factors that can restrict the TFET performance is the ga...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2023-06-01
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Series: | Alexandria Engineering Journal |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S1110016823002624 |