Investigation of gate leakage current in TFET: A semi-numerical approach

Tunneling FET (TFET) has been demonstrated as a favorable candidate to replace conventional MOSFETs in low-power applications. However, there are many challenges that should be overcome to efficiently operate the TFET. One of the most limiting factors that can restrict the TFET performance is the ga...

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Bibliographic Details
Main Authors: N.M.S. Tawfik, A. Shaker, I. Sayed, H. Kamel, M.S. Salem, M. Dessouky, M. Fedawy
Format: Article
Language:English
Published: Elsevier 2023-06-01
Series:Alexandria Engineering Journal
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S1110016823002624