Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

We investigated the temperature-dependent reverse characteristics (<i>J<sub>R</sub>-V<sub>R</sub>-T</i>) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To understand the device leakage mechanism, temperature-de...

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Bibliographic Details
Main Authors: Vishwajeet Maurya, Julien Buckley, Daniel Alquier, Mohamed-Reda Irekti, Helge Haas, Matthew Charles, Marie-Anne Jaud, Veronique Sousa
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Energies
Subjects:
gallium nitride
vertical Schottky-diode
reverse leakage
TCAD modeling
Online Access:https://www.mdpi.com/1996-1073/16/14/5447

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https://www.mdpi.com/1996-1073/16/14/5447

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