Embedded gate CVD MoS2 microwave FETs

Embedded gate CVD MoS2 microwave FETs

High-frequency electronics: embedded gates boost MoS2 radio frequency transistors 2D materials enable radio frequency transistors, yet the absence of a bandgap in graphene limits its maximum oscillation frequency. A team lead by Sanjay Kumar Banerjee at the University of Texas at Austin fabricated r...

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Bibliografiske detaljer
Main Authors: Atresh Sanne, Saungeun Park, Rudresh Ghosh, Maruthi Nagavalli Yogeesh, Chison Liu, Leo Mathew, Rajesh Rao, Deji Akinwande, Sanjay Kumar Banerjee
Format: Article
Sprog:English
Udgivet: Nature Portfolio 2017-08-01
Serier:npj 2D Materials and Applications
Online adgang:https://doi.org/10.1038/s41699-017-0029-z

Internet

https://doi.org/10.1038/s41699-017-0029-z

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