Embedded gate CVD MoS2 microwave FETs
High-frequency electronics: embedded gates boost MoS2 radio frequency transistors 2D materials enable radio frequency transistors, yet the absence of a bandgap in graphene limits its maximum oscillation frequency. A team lead by Sanjay Kumar Banerjee at the University of Texas at Austin fabricated r...
| Main Authors: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado: |
Nature Portfolio
2017-08-01
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| Series: | npj 2D Materials and Applications |
| Acceso en liña: | https://doi.org/10.1038/s41699-017-0029-z |