Embedded gate CVD MoS2 microwave FETs
High-frequency electronics: embedded gates boost MoS2 radio frequency transistors 2D materials enable radio frequency transistors, yet the absence of a bandgap in graphene limits its maximum oscillation frequency. A team lead by Sanjay Kumar Banerjee at the University of Texas at Austin fabricated r...
| Những tác giả chính: | , , , , , , , , |
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| Định dạng: | Bài viết |
| Ngôn ngữ: | English |
| Được phát hành: |
Nature Portfolio
2017-08-01
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| Loạt: | npj 2D Materials and Applications |
| Truy cập trực tuyến: | https://doi.org/10.1038/s41699-017-0029-z |