AlGaN/GaN pressure sensor with a Wheatstone bridge structure
In this work, a Wheatstone bridge-type pressure sensor based on AlGaN/GaN heterostructure was fabricated for the first time. The pressure sensor consisted of four gateless high electron mobility transistors (HEMTs) on a 585 μm depth circular membrane, in which 15-μm-thick silicon substrate was left....
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4996257 |