Effects of InGaN-interlayer on closed stripes of GaN grown by serpentine channel patterned sapphire substrate
Gallium nitride (GaN) is a widely investigated semiconductor owing to its fascinating features suitable for a plethora of optoelectronic applications; nevertheless, high-quality growth of this material remains a challenge. In this work, the crystal quality of GaN grown by serpentine channel patterne...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2022-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac65e2 |