Effects of InGaN-interlayer on closed stripes of GaN grown by serpentine channel patterned sapphire substrate

Effects of InGaN-interlayer on closed stripes of GaN grown by serpentine channel patterned sapphire substrate

Gallium nitride (GaN) is a widely investigated semiconductor owing to its fascinating features suitable for a plethora of optoelectronic applications; nevertheless, high-quality growth of this material remains a challenge. In this work, the crystal quality of GaN grown by serpentine channel patterne...

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Bibliographic Details
Main Authors: Muhammad Saddique Akbar Khan, Menglai Lei, Huanqing Chen, Guo Yu, Rui Lang, Shukun Li, Xiaodong Hu
Format: Article
Language:English
Published: IOP Publishing 2022-01-01
Series:Materials Research Express
Subjects:
GaN
high-quality
PSS
SCPSS
InGaN
Online Access:https://doi.org/10.1088/2053-1591/ac65e2

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