Magnetic topological transistor exploiting layer-selective transport
We propose a magnetic topological transistor based on MnBi_{2}Te_{4}, in which the “on” state (quantized conductance) and the “off” state (zero conductance) can be easily switched by changing the relative direction of two adjacent electric fields (parallel vs antiparallel) applied within a two-termi...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2023-03-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.5.013179 |