Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers

Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers

In order to shift the light emission of nitride quantum structures towards the red color, the technological problem of low In incorporation in InGaN−based heterostructures has to be solved. To overcome this problem, we consider superlattices grown on InGaN buffers with different In content. Based on...

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Bibliographic Details
Main Authors: Grzegorz Staszczak, Iza Gorczyca, Ewa Grzanka, Julita Smalc-Koziorowska, Grzegorz Targowski, Tadeusz Suski
Format: Article
Language:English
Published: MDPI AG 2023-11-01
Series:Materials
Subjects:
red emission
superlattices
III-nitride semiconductors
quantum wells
band structure
Online Access:https://www.mdpi.com/1996-1944/16/23/7386

Internet

https://www.mdpi.com/1996-1944/16/23/7386

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