Gan Transistor in Space Equipments: From Selection to Applications
Two years ago, at ESPC-2014 results of ESA activity on GaN transistor survey has been presented. The main outcome was the existence of an unknown phenomena in silicon MOSFET: the dynamic Rdson. Today we are the time of studying introduction of this technology into products. At least two suppliers (E...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2017-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://doi.org/10.1051/e3sconf/20171612002 |