Gan Transistor in Space Equipments: From Selection to Applications
Two years ago, at ESPC-2014 results of ESA activity on GaN transistor survey has been presented. The main outcome was the existence of an unknown phenomena in silicon MOSFET: the dynamic Rdson. Today we are the time of studying introduction of this technology into products. At least two suppliers (E...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2017-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://doi.org/10.1051/e3sconf/20171612002 |
| _version_ | 1831764347665252352 |
|---|---|
| author | Fayt Philippe Fossion Marc Maynadier Paul Notarianni Michaël |
| author_facet | Fayt Philippe Fossion Marc Maynadier Paul Notarianni Michaël |
| author_sort | Fayt Philippe |
| collection | DOAJ |
| description | Two years ago, at ESPC-2014 results of ESA activity on GaN transistor survey has been presented. The main outcome was the existence of an unknown phenomena in silicon MOSFET: the dynamic Rdson.
Today we are the time of studying introduction of this technology into products. At least two suppliers (EPC- co & GaN Systems) are proposing stabilized GaN transistors components which are worth spending some time to try to implement in next generation product prototypes.
Space applications aren’t very different from terrestrial ones when we speak about benefits of using GaN technology into dc-dc converters: lower losses & more compact designs thanks to higher switching frequencies. Next to reliability analyses proposed by the component vendors to be able to address the automotive markets, there is of course quite a list “space” specific questions that need also to be answered to raise the confidence that GaN will one day be put is orbit: hermetic packaging & assembly on PCBs, radiation harness, reliability impact of radiations, cooling in the absence of air flow, thermal cycling, drivers, deratings to apply…
In this article we presents some prototyping results & shares some feedback & concerns about the introduction of GaN into space qualified dc-dc products. |
| first_indexed | 2024-12-22T05:42:26Z |
| format | Article |
| id | doaj.art-f0cfea5f7cb7405687e6cd08772cc99f |
| institution | Directory Open Access Journal |
| issn | 2267-1242 |
| language | English |
| last_indexed | 2024-12-22T05:42:26Z |
| publishDate | 2017-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | E3S Web of Conferences |
| spelling | doaj.art-f0cfea5f7cb7405687e6cd08772cc99f2022-12-21T18:37:09ZengEDP SciencesE3S Web of Conferences2267-12422017-01-01161200210.1051/e3sconf/20171612002e3sconf_espc2017_12002Gan Transistor in Space Equipments: From Selection to ApplicationsFayt PhilippeFossion MarcMaynadier PaulNotarianni MichaëlTwo years ago, at ESPC-2014 results of ESA activity on GaN transistor survey has been presented. The main outcome was the existence of an unknown phenomena in silicon MOSFET: the dynamic Rdson. Today we are the time of studying introduction of this technology into products. At least two suppliers (EPC- co & GaN Systems) are proposing stabilized GaN transistors components which are worth spending some time to try to implement in next generation product prototypes. Space applications aren’t very different from terrestrial ones when we speak about benefits of using GaN technology into dc-dc converters: lower losses & more compact designs thanks to higher switching frequencies. Next to reliability analyses proposed by the component vendors to be able to address the automotive markets, there is of course quite a list “space” specific questions that need also to be answered to raise the confidence that GaN will one day be put is orbit: hermetic packaging & assembly on PCBs, radiation harness, reliability impact of radiations, cooling in the absence of air flow, thermal cycling, drivers, deratings to apply… In this article we presents some prototyping results & shares some feedback & concerns about the introduction of GaN into space qualified dc-dc products.https://doi.org/10.1051/e3sconf/20171612002 |
| spellingShingle | Fayt Philippe Fossion Marc Maynadier Paul Notarianni Michaël Gan Transistor in Space Equipments: From Selection to Applications E3S Web of Conferences |
| title | Gan Transistor in Space Equipments: From Selection to Applications |
| title_full | Gan Transistor in Space Equipments: From Selection to Applications |
| title_fullStr | Gan Transistor in Space Equipments: From Selection to Applications |
| title_full_unstemmed | Gan Transistor in Space Equipments: From Selection to Applications |
| title_short | Gan Transistor in Space Equipments: From Selection to Applications |
| title_sort | gan transistor in space equipments from selection to applications |
| url | https://doi.org/10.1051/e3sconf/20171612002 |
| work_keys_str_mv | AT faytphilippe gantransistorinspaceequipmentsfromselectiontoapplications AT fossionmarc gantransistorinspaceequipmentsfromselectiontoapplications AT maynadierpaul gantransistorinspaceequipmentsfromselectiontoapplications AT notariannimichael gantransistorinspaceequipmentsfromselectiontoapplications |