Gan Transistor in Space Equipments: From Selection to Applications

Gan Transistor in Space Equipments: From Selection to Applications

Two years ago, at ESPC-2014 results of ESA activity on GaN transistor survey has been presented. The main outcome was the existence of an unknown phenomena in silicon MOSFET: the dynamic Rdson. Today we are the time of studying introduction of this technology into products. At least two suppliers (E...

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Bibliographic Details
Main Authors:	Fayt Philippe, Fossion Marc, Maynadier Paul, Notarianni Michaël
Format:	Article
Language:	English
Published:	EDP Sciences 2017-01-01
Series:	E3S Web of Conferences
Online Access:	https://doi.org/10.1051/e3sconf/20171612002

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