Active Voltage Balancing of Series Connected SiC MOSFET Submodules Using Pulsewidth Modulation

Active Voltage Balancing of Series Connected SiC MOSFET Submodules Using Pulsewidth Modulation

Series connection of multiple transistors is an attractive solution to achieve higher voltage capability. However, the voltage imbalance among the series-connected devices is a critical issue caused by mismatches of device characteristics and gate signals. To prevent the failure of devices from the...

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Bibliographic Details
Main Authors: Inhwan Lee, Xiu Yao
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Pulsewidth modulation (PWM)
series connection
silicon carbide (SiC) <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet</sc>
voltage balancing control (VBC)
wide bandgap device
Online Access:https://ieeexplore.ieee.org/document/9335052/

Internet

https://ieeexplore.ieee.org/document/9335052/

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