A High Performance 0.18 μm RF Switch for Multi-Standard
This paper proposes a stacked field-effect transistor (FET) single-pole, double-throw (SPDT) RF switch which is capable of multi-standard. Negative voltage generator (NVG), logic controller, level shifter, and RF Switch branches are integrated. A PMOS self-biased strategy is proposed to improve line...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-06-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/13/2046 |