Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent mem...

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Bibliographic Details
Main Authors: Somnath S. Kundale, Girish U. Kamble, Pradnya P. Patil, Snehal L. Patil, Kasturi A. Rokade, Atul C. Khot, Kiran A. Nirmal, Rajanish K. Kamat, Kyeong Heon Kim, Ho-Myoung An, Tukaram D. Dongale, Tae Geun Kim
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Nanomaterials
Subjects:
resistive switching
memristor
electrochemical synthesis
resistive memory
neuromorphic computing
sensor
Online Access:https://www.mdpi.com/2079-4991/13/12/1879

Internet

https://www.mdpi.com/2079-4991/13/12/1879

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