Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications
Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent mem...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/12/1879 |
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| author | Somnath S. Kundale Girish U. Kamble Pradnya P. Patil Snehal L. Patil Kasturi A. Rokade Atul C. Khot Kiran A. Nirmal Rajanish K. Kamat Kyeong Heon Kim Ho-Myoung An Tukaram D. Dongale Tae Geun Kim |
| author_facet | Somnath S. Kundale Girish U. Kamble Pradnya P. Patil Snehal L. Patil Kasturi A. Rokade Atul C. Khot Kiran A. Nirmal Rajanish K. Kamat Kyeong Heon Kim Ho-Myoung An Tukaram D. Dongale Tae Geun Kim |
| author_sort | Somnath S. Kundale |
| collection | DOAJ |
| description | Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section. |
| first_indexed | 2024-03-11T02:05:48Z |
| format | Article |
| id | doaj.art-f163bbe5bf2444ac9b2b1865d872e8c0 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T02:05:48Z |
| publishDate | 2023-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-f163bbe5bf2444ac9b2b1865d872e8c02023-11-18T11:54:09ZengMDPI AGNanomaterials2079-49912023-06-011312187910.3390/nano13121879Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing ApplicationsSomnath S. Kundale0Girish U. Kamble1Pradnya P. Patil2Snehal L. Patil3Kasturi A. Rokade4Atul C. Khot5Kiran A. Nirmal6Rajanish K. Kamat7Kyeong Heon Kim8Ho-Myoung An9Tukaram D. Dongale10Tae Geun Kim11Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, IndiaComputational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, IndiaComputational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, IndiaComputational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, IndiaComputational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, IndiaSchool of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of KoreaSchool of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of KoreaDepartment of Electronics, Shivaji University, Kolhapur 416004, IndiaDepartment of Convergence Electronic Engineering, Gyeongsang National University, Jinjudae-ro 501, Jinju 52828, Republic of KoreaDepartment of Electronics, Osan University, 45, Cheonghak-ro, Osan-si 18119, Republic of KoreaComputational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, IndiaSchool of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of KoreaResistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.https://www.mdpi.com/2079-4991/13/12/1879resistive switchingmemristorelectrochemical synthesisresistive memoryneuromorphic computingsensor |
| spellingShingle | Somnath S. Kundale Girish U. Kamble Pradnya P. Patil Snehal L. Patil Kasturi A. Rokade Atul C. Khot Kiran A. Nirmal Rajanish K. Kamat Kyeong Heon Kim Ho-Myoung An Tukaram D. Dongale Tae Geun Kim Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications Nanomaterials resistive switching memristor electrochemical synthesis resistive memory neuromorphic computing sensor |
| title | Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications |
| title_full | Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications |
| title_fullStr | Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications |
| title_full_unstemmed | Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications |
| title_short | Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications |
| title_sort | review of electrochemically synthesized resistive switching devices memory storage neuromorphic computing and sensing applications |
| topic | resistive switching memristor electrochemical synthesis resistive memory neuromorphic computing sensor |
| url | https://www.mdpi.com/2079-4991/13/12/1879 |
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