A Buried Thermal Rail (BTR) Technology to Improve Electrothermal Characteristics of Complementary Field-Effect Transistor (CFET)
The complementary field-effect transistor (CFET) with N-type FET (NFET) stacked on P-type FET (PFET) is a promising device structure based on gate-all-around FET (GAAFET). Because of the high-density stacked structure, the self-heating effect (SHE) becomes more and more severe. Buried thermal rail (...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-09-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/14/9/1751 |