Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO<sub>2</sub> Capacitor for Normally Off Application

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO<sub>2</sub> Capacitor for Normally Off Application

In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode. One of the approaches for ultralow power consumption is normally off computing by utilizing nonvolatile memory. A...

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Bibliographic Details
Main Authors: Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Nonvolatile
SRAM
ferroelectric
HfO₂
normally-off
ultralow power
Online Access:https://ieeexplore.ieee.org/document/8277173/

Internet

https://ieeexplore.ieee.org/document/8277173/

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