Strain and atomic stacking of bismuth thin film in its quasi-van der Waals epitaxy on (111) Si substrate
Abstract We report on the structural properties of Bi thin films grown on (111) Si substrates with a thickness of 22–30 BL. HRXRD and EBSD measurements show that these Bi films are mainly composed of twinning grains in the (0003) direction. The grain size can be as large as tens of microns. From a d...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-11-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-023-46860-z |