Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

TID effects occur in MOS-gated transistors in radiation environments where proton and gamma-rays irradiate the devices. TID effects seriously affect the electrical characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They can eventually result in the malfunction of power sy...

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Bibliographic Details
Main Authors: Chaeyun Kim, Hyowon Yoon, Dong-Seok Kim, Ogyun Seok
Format: Article
Language:English
Published: MDPI AG 2024-04-01
Series:Electronics
Subjects:
SiC MOSFET
gamma-ray
radiation
total ionizing dose
power device
Online Access:https://www.mdpi.com/2079-9292/13/7/1352

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https://www.mdpi.com/2079-9292/13/7/1352

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