Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation
TID effects occur in MOS-gated transistors in radiation environments where proton and gamma-rays irradiate the devices. TID effects seriously affect the electrical characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They can eventually result in the malfunction of power sy...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-04-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/13/7/1352 |
| Summary: | TID effects occur in MOS-gated transistors in radiation environments where proton and gamma-rays irradiate the devices. TID effects seriously affect the electrical characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They can eventually result in the malfunction of power systems when exposed to long-term radiation conditions. We irradiated gamma-rays and protons into 1.2 kV SiC MOSFETs and evaluated the change in electrical properties to analyze the TID’s effects. As a result of the experiment, the threshold voltage (V<sub>T</sub>) and on-resistance (R<sub>on</sub>) of 1.2 kV SiC MOSFETs decreased because positive fixed charges inside the oxide increased depending on the radiation dose of the gamma-ray and fluence of the proton irradiations. The degradation of breakdown voltage (BV) occurred owing to a change in the depletion curvature at the edge of termination regions owing to the trapping of the charge in the field’s oxide. |
|---|---|
| ISSN: | 2079-9292 |