Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation
TID effects occur in MOS-gated transistors in radiation environments where proton and gamma-rays irradiate the devices. TID effects seriously affect the electrical characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They can eventually result in the malfunction of power sy...
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| Format: | Article |
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MDPI AG
2024-04-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/13/7/1352 |
| _version_ | 1797212743061733376 |
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| author | Chaeyun Kim Hyowon Yoon Dong-Seok Kim Ogyun Seok |
| author_facet | Chaeyun Kim Hyowon Yoon Dong-Seok Kim Ogyun Seok |
| author_sort | Chaeyun Kim |
| collection | DOAJ |
| description | TID effects occur in MOS-gated transistors in radiation environments where proton and gamma-rays irradiate the devices. TID effects seriously affect the electrical characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They can eventually result in the malfunction of power systems when exposed to long-term radiation conditions. We irradiated gamma-rays and protons into 1.2 kV SiC MOSFETs and evaluated the change in electrical properties to analyze the TID’s effects. As a result of the experiment, the threshold voltage (V<sub>T</sub>) and on-resistance (R<sub>on</sub>) of 1.2 kV SiC MOSFETs decreased because positive fixed charges inside the oxide increased depending on the radiation dose of the gamma-ray and fluence of the proton irradiations. The degradation of breakdown voltage (BV) occurred owing to a change in the depletion curvature at the edge of termination regions owing to the trapping of the charge in the field’s oxide. |
| first_indexed | 2024-04-24T10:47:14Z |
| format | Article |
| id | doaj.art-f1f121fec4a045b1ae3568090a9cc6f4 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-24T10:47:14Z |
| publishDate | 2024-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-f1f121fec4a045b1ae3568090a9cc6f42024-04-12T13:17:28ZengMDPI AGElectronics2079-92922024-04-01137135210.3390/electronics13071352Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton IrradiationChaeyun Kim0Hyowon Yoon1Dong-Seok Kim2Ogyun Seok3Department of Electronic Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of KoreaDepartment of Semiconductor System Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of KoreaKorea Atomic Energy Research Institute, Gyeongju-si 38180, Republic of KoreaSchool of Electronic Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of KoreaTID effects occur in MOS-gated transistors in radiation environments where proton and gamma-rays irradiate the devices. TID effects seriously affect the electrical characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They can eventually result in the malfunction of power systems when exposed to long-term radiation conditions. We irradiated gamma-rays and protons into 1.2 kV SiC MOSFETs and evaluated the change in electrical properties to analyze the TID’s effects. As a result of the experiment, the threshold voltage (V<sub>T</sub>) and on-resistance (R<sub>on</sub>) of 1.2 kV SiC MOSFETs decreased because positive fixed charges inside the oxide increased depending on the radiation dose of the gamma-ray and fluence of the proton irradiations. The degradation of breakdown voltage (BV) occurred owing to a change in the depletion curvature at the edge of termination regions owing to the trapping of the charge in the field’s oxide.https://www.mdpi.com/2079-9292/13/7/1352SiC MOSFETgamma-rayradiationtotal ionizing dosepower device |
| spellingShingle | Chaeyun Kim Hyowon Yoon Dong-Seok Kim Ogyun Seok Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation Electronics SiC MOSFET gamma-ray radiation total ionizing dose power device |
| title | Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation |
| title_full | Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation |
| title_fullStr | Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation |
| title_full_unstemmed | Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation |
| title_short | Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation |
| title_sort | comparison analysis of radiation effects on 1 2 kv sic metal oxide semiconductor field effect transistors with gamma ray and proton irradiation |
| topic | SiC MOSFET gamma-ray radiation total ionizing dose power device |
| url | https://www.mdpi.com/2079-9292/13/7/1352 |
| work_keys_str_mv | AT chaeyunkim comparisonanalysisofradiationeffectson12kvsicmetaloxidesemiconductorfieldeffecttransistorswithgammarayandprotonirradiation AT hyowonyoon comparisonanalysisofradiationeffectson12kvsicmetaloxidesemiconductorfieldeffecttransistorswithgammarayandprotonirradiation AT dongseokkim comparisonanalysisofradiationeffectson12kvsicmetaloxidesemiconductorfieldeffecttransistorswithgammarayandprotonirradiation AT ogyunseok comparisonanalysisofradiationeffectson12kvsicmetaloxidesemiconductorfieldeffecttransistorswithgammarayandprotonirradiation |