Effect of Wafer Tilt During Ion Implantation on the Performance of a Silicon Traveling-Wave Mach-Zehnder Modulator

This paper reports a study of the effect of wafer tilt during dopant implantation on the performance of silicon PN phase shifter and traveling-wave Mach-Zehnder modulator. The PN phase shifter is designed and process simulated to include the effects of different fabrication processes in the device p...

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Bibliographic Details
Main Authors: Darpan Mishra, Ramesh Kumar Sonkar
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9600820/