Design considerations of high voltage RESURF nLDMOS: An analytical and numerical study
In this paper, a RESURF high voltage (HV) nLDMOS is designed in 0.35 μm BiCMOS technology (STMicroelectronics technology-like). Optimization of the key device/process parameters of the device is performed using analytical approach and verified using advanced 2D numerical simulation. The results show...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2015-06-01
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| Series: | Ain Shams Engineering Journal |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2090447914001750 |