Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition
Defects are detrimental to the performance of MoS2 field-effect transistors. Here, the origin of defects from prolonged high-field operation is attributed to long-term electrical stress in the transistor ON state, which weakens the Mo-S bonds of the original crystal.
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-02-01
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| Series: | Communications Materials |
| Online Access: | https://doi.org/10.1038/s43246-023-00333-y |