Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping
We report on the significantly improved linewidth enhancement factor (αH-factor) of 1.3-µm InAs/GaAs quantum dot (QD) lasers by direct Si doping, compared with ones having identical structures but without the Si doping. It is found that the αH-factors for the ground-state and first excited-state at...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0044313 |