Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping
We report on the significantly improved linewidth enhancement factor (αH-factor) of 1.3-µm InAs/GaAs quantum dot (QD) lasers by direct Si doping, compared with ones having identical structures but without the Si doping. It is found that the αH-factors for the ground-state and first excited-state at...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2021-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0044313 |
| _version_ | 1818611101422583808 |
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| author | Ya-Qi Qiu Zun-Ren Lv Hong Wang Hao-Miao Wang Xiao-Guang Yang Tao Yang |
| author_facet | Ya-Qi Qiu Zun-Ren Lv Hong Wang Hao-Miao Wang Xiao-Guang Yang Tao Yang |
| author_sort | Ya-Qi Qiu |
| collection | DOAJ |
| description | We report on the significantly improved linewidth enhancement factor (αH-factor) of 1.3-µm InAs/GaAs quantum dot (QD) lasers by direct Si doping, compared with ones having identical structures but without the Si doping. It is found that the αH-factors for the ground-state and first excited-state at their gain peak positions of the Si-doped QD lasers are 1.48 and 0.63 while those of the undoped QD lasers are 2.07 and 1.07, greatly decreasing by about 28.5% and 41.1%, respectively. Furthermore, theoretical calculation and analysis suggest that direct Si doping would increase the electron quasi-Fermi level in conduction, leading to the increase in population inversion. Meanwhile, the appearance of a built-in electric field caused by the Si doping would accelerate the capture of electrons into QDs and strengthen the confinement effect of electrons, resulting in an increased differential gain. |
| first_indexed | 2024-12-16T15:24:58Z |
| format | Article |
| id | doaj.art-f20f677ed031436594f7fd7fd3a2b3ff |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-16T15:24:58Z |
| publishDate | 2021-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-f20f677ed031436594f7fd7fd3a2b3ff2022-12-21T22:26:32ZengAIP Publishing LLCAIP Advances2158-32262021-05-01115055002055002-510.1063/5.0044313Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si dopingYa-Qi Qiu0Zun-Ren Lv1Hong Wang2Hao-Miao Wang3Xiao-Guang Yang4Tao Yang5Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaWe report on the significantly improved linewidth enhancement factor (αH-factor) of 1.3-µm InAs/GaAs quantum dot (QD) lasers by direct Si doping, compared with ones having identical structures but without the Si doping. It is found that the αH-factors for the ground-state and first excited-state at their gain peak positions of the Si-doped QD lasers are 1.48 and 0.63 while those of the undoped QD lasers are 2.07 and 1.07, greatly decreasing by about 28.5% and 41.1%, respectively. Furthermore, theoretical calculation and analysis suggest that direct Si doping would increase the electron quasi-Fermi level in conduction, leading to the increase in population inversion. Meanwhile, the appearance of a built-in electric field caused by the Si doping would accelerate the capture of electrons into QDs and strengthen the confinement effect of electrons, resulting in an increased differential gain.http://dx.doi.org/10.1063/5.0044313 |
| spellingShingle | Ya-Qi Qiu Zun-Ren Lv Hong Wang Hao-Miao Wang Xiao-Guang Yang Tao Yang Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping AIP Advances |
| title | Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping |
| title_full | Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping |
| title_fullStr | Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping |
| title_full_unstemmed | Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping |
| title_short | Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping |
| title_sort | improved linewidth enhancement factor of 1 3 µm inas gaas quantum dot lasers by direct si doping |
| url | http://dx.doi.org/10.1063/5.0044313 |
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