Electromigration-induced resistance switching in indented Al microstrips

Electromigration-induced resistance switching in indented Al microstrips

Non-volatile resistive memory cells are promising candidates to tremendously impact the further development of Boolean and neuromorphic computing. In particular, nanoscale memory-bit cells based on electromigration (EM)-induced resistive switching in monolithic metallic structures have been identifi...

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Bibliographic Details
Main Authors: J Lombardo, S Collienne, A Petrillo, E Fourneau, N D Nguyen, A V Silhanek
Format: Article
Language:English
Published: IOP Publishing 2019-01-01
Series:New Journal of Physics
Subjects:
electromigration
memristor
nanofabrication
Online Access:https://doi.org/10.1088/1367-2630/ab5025

Internet

https://doi.org/10.1088/1367-2630/ab5025

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