Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops

Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops

This paper presents an experimental study on the high-dose-rate transient ionizing radiation response and influencing factors of a Nano-Scale Fully Depleted Silicon-On-Insulator (FDSOI) D flip-flops (DFFs) circuit. Results indicate that data errors occur in DFFs at the lowest dose rate of 4.70 × 10&...

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Bibliographic Details
Main Authors: Tongde Li, Jingshuang Yuan, Yang Bai, Chunqing Yu, Chunliang Gou, Lei Shu, Liang Wang, Yuanfu Zhao
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Electronics
Subjects:
high-dose-rate transient ionizing effect
FDSOI
TCAD simulation
supply voltage
Online Access:https://www.mdpi.com/2079-9292/12/14/3149

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https://www.mdpi.com/2079-9292/12/14/3149

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