Study of Temperature Effects on the Design of Active Region for 808 nm High-Power Semiconductor Laser

Study of Temperature Effects on the Design of Active Region for 808 nm High-Power Semiconductor Laser

High-power, broad-area, semiconductor lasers are attractive sources for material processing, aerospace, and laser pumping. The design of the active region is crucial to achieve the required high power and electro-optical conversion efficiency, since the temperature significantly affects the performa...

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Bibliographic Details
Main Authors: Shunhua Wu, Te Li, Zhenfu Wang, Lang Chen, Jiachen Zhang, Junyue Zhang, Jiachen Liu, Yeqi Zhang, Liting Deng
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Crystals
Subjects:
semiconductor laser
temperature effects
carrier confinement
internal quantum efficiency
Online Access:https://www.mdpi.com/2073-4352/13/1/85

Internet

https://www.mdpi.com/2073-4352/13/1/85

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