IR - Blind Visible Silicon Detector
Abstract In the present paper , silicon p - n junction detector of 600 + 25 nm peak response has been characterized . This peak was obtained by depositing high purity Au thin film onto sensitive side of the p - n junction ( donor - side ) , this film reduces the responsivity in the near - IR region...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2005-01-01
|
| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_181371_4237e187386c51e932ef7578c469beb9.pdf |