Competition between Direct Detection Mechanisms in Planar Bow-Tie Microwave Diodes on the Base of InAlAs/InGaAs/InAlAs Heterostructures

Competition between Direct Detection Mechanisms in Planar Bow-Tie Microwave Diodes on the Base of InAlAs/InGaAs/InAlAs Heterostructures

The application of the unique properties of terahertz radiation is increasingly needed in sensors, especially in those operating at room temperature without an external bias voltage. Bow-tie microwave diodes on the base of InGaAs semiconductor structures meet these requirements. These diodes operate...

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Bibliographic Details
Main Authors: Algirdas Sužiedėlis, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Karolis Požela, Maksimas Anbinderis
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Sensors
Subjects:
microwave detection
voltage sensitivity
bow-tie microwave diode
indium gallium arsenide
electromotive force of hot carriers
photo-gradient electromotive force
Online Access:https://www.mdpi.com/1424-8220/23/3/1441

Internet

https://www.mdpi.com/1424-8220/23/3/1441

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