Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors

Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors

Abstract Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgap...

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Bibliographic Details
Main Authors: Chengxu Shen, Zhigang Yin, Fionn Collins, Nicola Pinna
Format: Article
Language:English
Published: Wiley 2022-08-01
Series:Advanced Science
Subjects:
atomic layer deposition
electronics
metal chalcogenides
metal oxides
transistors
Online Access:https://doi.org/10.1002/advs.202104599

Internet

https://doi.org/10.1002/advs.202104599

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