Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN
This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the optimal values of PCSS parameters. In this article...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Kaunas University of Technology
2019-08-01
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| Series: | Elektronika ir Elektrotechnika |
| Subjects: | |
| Online Access: | http://eejournal.ktu.lt/index.php/elt/article/view/23968 |