Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN

Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN

This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the optimal values of PCSS parameters. In this article...

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Bibliographic Details
Main Authors:	Marek Suproniuk, Karol Piwowarski, Bogdan Perka, Pawel Kaminski, Roman Kozlowski, Marian Teodorczyk
Format:	Article
Language:	English
Published:	Kaunas University of Technology 2019-08-01
Series:	Elektronika ir Elektrotechnika
Subjects:	photoconductive semiconductor switches pulse generators semi-insulating gan semi-insulating gap
Online Access:	http://eejournal.ktu.lt/index.php/elt/article/view/23968

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