Deep-UV wavelength-selective photodetectors based on lateral transport in AlGaN/AlN quantum well and dot-in-well structures
We report on the development of deep-ultraviolet (DUV) wavelength-selective top-illuminated photodetectors based on AlGaN/AlN quantum-dots-in-wells. Structures consisting of 100 AlGaN wells and AlN barriers were grown by plasma-assisted molecular beam epitaxy on sapphire substrates. Interdigitated m...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0059744 |