Modulating Ohmic Contact Through InGa<sub>x</sub>N<sub>y</sub>O<sub>z</sub> Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes

Modulating Ohmic Contact Through InGa<sub>x</sub>N<sub>y</sub>O<sub>z</sub> Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes

We report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through the design and the formation of the InGaxNyOz interfacial layer, which maintains high reflectivity of silver and forms good ohmic contact between pristine silver and p-GaN. The interfacial layer was designed a...

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Bibliographic Details
Main Authors: Binbin Zhu, Swee Tiam Tan, Wei Liu, Shunpeng Lu, Yiping Zhang, Shi Chen, Namig Hasanov, Xuejun Kang, Hilmi Volkan Demir
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
Subjects:
ITO
InGaxNyOz interfacial layer
ohmic contact
LED
Online Access:https://ieeexplore.ieee.org/document/7471432/

Internet

https://ieeexplore.ieee.org/document/7471432/

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