Modulating Ohmic Contact Through InGa<sub>x</sub>N<sub>y</sub>O<sub>z</sub> Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes
We report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through the design and the formation of the InGaxNyOz interfacial layer, which maintains high reflectivity of silver and forms good ohmic contact between pristine silver and p-GaN. The interfacial layer was designed a...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7471432/ |
| _version_ | 1818408467854000128 |
|---|---|
| author | Binbin Zhu Swee Tiam Tan Wei Liu Shunpeng Lu Yiping Zhang Shi Chen Namig Hasanov Xuejun Kang Hilmi Volkan Demir |
| author_facet | Binbin Zhu Swee Tiam Tan Wei Liu Shunpeng Lu Yiping Zhang Shi Chen Namig Hasanov Xuejun Kang Hilmi Volkan Demir |
| author_sort | Binbin Zhu |
| collection | DOAJ |
| description | We report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through the design and the formation of the InGaxNyOz interfacial layer, which maintains high reflectivity of silver and forms good ohmic contact between pristine silver and p-GaN. The interfacial layer was designed and formed by depositing a thin layer of indium tin oxide (ITO) on top of p-GaN, followed by thermal annealing, to enable the interdiffusion and the intermixing of In, Sn, Ga, O, and N atoms. Both electrical and optical performances of the LED with the optimized InGaxNyOz interfacial layer are improved, thus achieving the highest wall-plug efficiency, compared with those LEDs with and without ITO layers at operation current. |
| first_indexed | 2024-12-14T09:44:12Z |
| format | Article |
| id | doaj.art-f32b492bf42045409a3ed8e38be86b58 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-14T09:44:12Z |
| publishDate | 2016-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-f32b492bf42045409a3ed8e38be86b582022-12-21T23:07:43ZengIEEEIEEE Photonics Journal1943-06552016-01-01831810.1109/JPHOT.2016.25704227471432Modulating Ohmic Contact Through InGa<sub>x</sub>N<sub>y</sub>O<sub>z</sub> Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting DiodesBinbin Zhu0Swee Tiam Tan1Wei Liu2Shunpeng Lu3Yiping Zhang4Shi Chen5Namig Hasanov6Xuejun Kang7Hilmi Volkan Demir8Luminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeLuminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeLuminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeLuminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeLuminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeSchool of Physics and Mathematical Sciences, Nanyang Technological University, SingaporeLuminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeLuminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeLuminous! Centre of Excellence for Semiconductor Lighting and Displays, The Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeWe report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through the design and the formation of the InGaxNyOz interfacial layer, which maintains high reflectivity of silver and forms good ohmic contact between pristine silver and p-GaN. The interfacial layer was designed and formed by depositing a thin layer of indium tin oxide (ITO) on top of p-GaN, followed by thermal annealing, to enable the interdiffusion and the intermixing of In, Sn, Ga, O, and N atoms. Both electrical and optical performances of the LED with the optimized InGaxNyOz interfacial layer are improved, thus achieving the highest wall-plug efficiency, compared with those LEDs with and without ITO layers at operation current.https://ieeexplore.ieee.org/document/7471432/ITOInGaxNyOz interfacial layerohmic contactLED |
| spellingShingle | Binbin Zhu Swee Tiam Tan Wei Liu Shunpeng Lu Yiping Zhang Shi Chen Namig Hasanov Xuejun Kang Hilmi Volkan Demir Modulating Ohmic Contact Through InGa<sub>x</sub>N<sub>y</sub>O<sub>z</sub> Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes IEEE Photonics Journal ITO InGaxNyOz interfacial layer ohmic contact LED |
| title | Modulating Ohmic Contact Through InGa<sub>x</sub>N<sub>y</sub>O<sub>z</sub> Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes |
| title_full | Modulating Ohmic Contact Through InGa<sub>x</sub>N<sub>y</sub>O<sub>z</sub> Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes |
| title_fullStr | Modulating Ohmic Contact Through InGa<sub>x</sub>N<sub>y</sub>O<sub>z</sub> Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes |
| title_full_unstemmed | Modulating Ohmic Contact Through InGa<sub>x</sub>N<sub>y</sub>O<sub>z</sub> Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes |
| title_short | Modulating Ohmic Contact Through InGa<sub>x</sub>N<sub>y</sub>O<sub>z</sub> Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes |
| title_sort | modulating ohmic contact through inga sub x sub n sub y sub o sub z sub interfacial layer for high performance ingan gan based light emitting diodes |
| topic | ITO InGaxNyOz interfacial layer ohmic contact LED |
| url | https://ieeexplore.ieee.org/document/7471432/ |
| work_keys_str_mv | AT binbinzhu modulatingohmiccontactthroughingasubxsubnsubysubosubzsubinterfaciallayerforhighperformanceinganganbasedlightemittingdiodes AT sweetiamtan modulatingohmiccontactthroughingasubxsubnsubysubosubzsubinterfaciallayerforhighperformanceinganganbasedlightemittingdiodes AT weiliu modulatingohmiccontactthroughingasubxsubnsubysubosubzsubinterfaciallayerforhighperformanceinganganbasedlightemittingdiodes AT shunpenglu modulatingohmiccontactthroughingasubxsubnsubysubosubzsubinterfaciallayerforhighperformanceinganganbasedlightemittingdiodes AT yipingzhang modulatingohmiccontactthroughingasubxsubnsubysubosubzsubinterfaciallayerforhighperformanceinganganbasedlightemittingdiodes AT shichen modulatingohmiccontactthroughingasubxsubnsubysubosubzsubinterfaciallayerforhighperformanceinganganbasedlightemittingdiodes AT namighasanov modulatingohmiccontactthroughingasubxsubnsubysubosubzsubinterfaciallayerforhighperformanceinganganbasedlightemittingdiodes AT xuejunkang modulatingohmiccontactthroughingasubxsubnsubysubosubzsubinterfaciallayerforhighperformanceinganganbasedlightemittingdiodes AT hilmivolkandemir modulatingohmiccontactthroughingasubxsubnsubysubosubzsubinterfaciallayerforhighperformanceinganganbasedlightemittingdiodes |