Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode

Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode

In this submission, we discuss the growth of charge-controllable GaAs quantum dots embedded in an n-i-p diode structure, from the perspective of a molecular beam epitaxy grower. The QDs show no blinking and narrow linewidths. We show that the parameters used led to a bimodal growth mode of QDs resul...

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Sonraí bibleagrafaíochta
Príomhchruthaitheoirí: Hans Georg Babin, Julian Ritzmann, Nikolai Bart, Marcel Schmidt, Timo Kruck, Liang Zhai, Matthias C. Löbl, Giang N. Nguyen, Clemens Spinnler, Leonardo Ranasinghe, Richard J. Warburton, Christian Heyn, Andreas D. Wieck, Arne Ludwig
Formáid: Alt
Teanga:English
Foilsithe / Cruthaithe: MDPI AG 2021-10-01
Sraith:Nanomaterials
Ábhair:
quantum dots
single-photon emitters
quantum photonics
semiconductor epitaxy
growth kinetics
Rochtain ar líne:https://www.mdpi.com/2079-4991/11/10/2703

Ar líne

https://www.mdpi.com/2079-4991/11/10/2703

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