Single flake homo p–n diode of MoTe2 enabled by oxygen plasma doping

Two-dimensional (2D) materials play a crucial role as fundamental electrical components in modern electronics and optoelectronics next-generation artificial intelligent devices. This study presents a methodology for creating a laterally uniform p–n junction by using a partial oxygen plasma-mediated...

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Bibliographic Details
Main Authors: Zulfiqar Irsa, Gul Sania, Sohail Hafiz Aamir, Rabani Iqra, Gul Saima, Rehman Malik Abdul, Wabaidur Saikh Mohammad, Yasir Muhammad, Ullah Inam, Khan Muhammad Asghar, Rehman Shania, Khan Muhammad Farooq
Format: Article
Language:English
Published: De Gruyter 2024-02-01
Series:Nanotechnology Reviews
Subjects:
Online Access:https://doi.org/10.1515/ntrev-2023-0207