Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power GaN device applications. The FEG-HEMT demonstrates a combination of ferroelectric polarization and charge trapping process in the ferro-charge-storage gate stack, leading to a positive...

Full description

Bibliographic Details
Main Authors: Jui-Sheng Wu, Chih-Chieh Lee, Chia-Hsun Wu, Cheng-Jun Huang, Yan-Kui Liang, You-Chen Weng, Edward Yi Chang
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN/GaN
metal-insulator-semiconductor (MIS)-HEMT
enhancement-mode
charge trap gate stack
threshold voltage stability
Online Access:https://ieeexplore.ieee.org/document/9815223/

Internet

https://ieeexplore.ieee.org/document/9815223/

Similar Items