A GexSe1-x switch-only-memory technology through polarized atomic distribution
Abstract Ovonic threshold switching (OTS) materials that are frequently used with a resistor (1S1R) in memory devices have been found to show controllable and reversible memory properties, which could enable new memory architectures. Here, we examine the impact of composition on the polarity-depende...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-09-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-73131-2 |