Design and simulation of a novel dual current mirror based CMOS‐MEMS integrated pressure sensor

Design and simulation of a novel dual current mirror based CMOS‐MEMS integrated pressure sensor

Abstract This paper presents a novel dual current mirror based CMOS circuit for design and development of highly sensitive CMOS‐MEMS integrated pressure sensors. The proposed pressure sensing structure has been designed using piezoresistive effect in MOSFETs and 5 μm standard CMOS technology paramet...

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Bibliographic Details
Main Authors: Shashi Kumar, Gaddiella Diengdoh Ropmay, Pradeep Kumar Rathore, Peesapati Rangababu, Jamil Akhtar
Format: Article
Language:English
Published: Wiley 2021-05-01
Series:IET Science, Measurement & Technology
Subjects:
Computer‐aided circuit analysis and design
Amplifiers
Semiconductor integrated circuit design, layout, modelling and testing
CMOS integrated circuits
Design and modelling of MEMS and NEMS devices
Fabrication of MEMS and NEMS devices
Online Access:https://doi.org/10.1049/smt2.12028

Internet

https://doi.org/10.1049/smt2.12028

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