Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field

Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field

Abstract The refractive index of AlN has a direct influence on AlGaN-based deep ultraviolet optoelectronic devices, such as the external quantum efficiency of light-emitting devices. Revealing the dependence of the refractive index of AlN on the threading dislocations is meaningful since high-densit...

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Bibliographic Details
Main Authors: Jianwei Ben, Xiaojuan Sun, Yuping Jia, Ke Jiang, Zhiming Shi, You Wu, Cuihong Kai, Yong Wang, Xuguang Luo, Zhe Chuan Feng, Dabing Li
Format: Article
Language:English
Published: SpringerOpen 2019-05-01
Series:Nanoscale Research Letters
Subjects:
Refractive index
AlN
Threading dislocation density
Nanoscale strain field around dislocations
Online Access:http://link.springer.com/article/10.1186/s11671-019-3018-7

Internet

http://link.springer.com/article/10.1186/s11671-019-3018-7

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